AON4603 - Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge..

n-channel VDS (V) = 30V ID = 4A p-channel -30V -3.6A (VGS= ±10V) (VGS = ±10V) (VGS = ±4.5V) RDS(ON) < 75mΩ < 100mΩ RDS(ON) < 115mΩ < 180mΩ D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G1 S1 G2 S2 DFN2X3 n-channel p-channel Units V V A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain TA=25°C 4 Current A 3.2 ID TA=70°C Pulsed Drain Current B Max p-channel -30 ±20 -3.6 -2.9 -12.

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